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EPC200 Datasheet(PDF) 2 Page - Espros Photonics corp

Part # EPC200
Description  High sensitive photodiodes
PDF  6 Pages
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Manufacturer  EPC [Espros Photonics corp]
Direct Link  http://www.espros.ch
Logo EPC - Espros Photonics corp

EPC200 Datasheet(HTML) 2 Page - Espros Photonics corp

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Absolute Maximum Ratings (Notes 1, 2)
Recommended Operating Conditions
Reverse Voltage VR
Storage Temperature Range (TS)
Lead Temperature solder, 4 sec. (TL)
Expected Lifetime (MTBF)
30.0 V
-40°C to +85°C
+260°C
500 * 106 h @ 25°C
(<2 FIT)
Reverse Voltage (VR)
Operating Temperature (TA)
Relative Humidity (non-condensing)
Min.
1.5
-40
+5
Max.
20.0
+85
+95
Units
V
°C
%
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed
specifications and test conditions, see Electrical Characteristics.
Note 2: This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (2kV to <4kV). Handling and as -
sembly of this device should only be done at ESD protected workstations.
General Characteristics
Unless otherwise stated, measuring parameters are V R = 5.0 V, -40°C < TA < +85°C, RL = 50 Ω
Symbol
Parameter
Conditions/Comments
Values
Units
Min.
Typ.
Max.
λS max. Wavelength
max. Sensitivity
850
nm
λ
Wavelength Range
S = 20 % of Smax
450
1050
nm
Sλ
Spectral Sensitivity
λ = 850nm, VR = 5V, Ie = 1 mW/cm2
λ = 950nm, VR = 5V, Ie = 1 mW/cm2
0.61
0.43
A/W
A/W
η
Quantum Efficiency
λ = 850nm, VR = 5V, Ie = 1 mW/cm2
λ = 950nm, VR = 5V, Ie = 1 mW/cm2
90
62
%
φ
Half angle
±60
°
VO
Open Circuit Voltage
Ie = 0.5 mW/cm2
250
mV
TCV
Temperature Coefficient of ISC
0.25
%/K
TCO
Temperature Coefficient of VO
-3.0
mV/K
IP
Photo Current
VR = 5V, Ie = 1 mW/cm2, λ = 850 nm
VR = 5V, Ie = 1 mW/cm2, λ = 950 nm
18.7
13.2
μA
IR
Dark Current
VR = 5 V, TA= 20°C
VR = 20 V, TA= 20°C
Selected types with reduced dark current on request
2
5
20
nA
ISC
Short-circuit Current
Ie = 1 mW/cm2, λ = 850 nm
20
μA
tr
Rise/Fall Time
VR = +1.5 V
photo current measured at RL = 50
Ω , λ = 850 nm, IP = 200 μA
300
ns
VR = +5.0 V
140
VR = +10.0 V
70
CO
Capacitance
VR = +5V, ƒ = 100kHz, E = 0
22
pF
NEP
Noise Equivalent Power
VR = 5 V
1.2x10-14
W/√Hz
Connection Diagram
5
TOP VIEW
2
3
Cathodes are
connected on chip
1
4
Pin
Assignment
1
Cathode
2
Cathode
3
Cathode
4
Cathode
5
Anode
Figure 2: Chip connections
© 2014 ESPROS Photonics Corporation
Characteristics subject to change without notice
2 / 6
Datasheet epc200 - V1.2
www.espros.ch



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