| Electronic Components Datasheet Search |
|
EPC200 Datasheet(PDF) 2 Page - Espros Photonics corp |
|
|
|||||||||||||||||||||||||||||
EPC200 Datasheet(HTML) 2 Page - Espros Photonics corp |
|
2 / 6 page ![]() Absolute Maximum Ratings (Notes 1, 2) Recommended Operating Conditions Reverse Voltage VR Storage Temperature Range (TS) Lead Temperature solder, 4 sec. (TL) Expected Lifetime (MTBF) 30.0 V -40°C to +85°C +260°C 500 * 106 h @ 25°C (<2 FIT) Reverse Voltage (VR) Operating Temperature (TA) Relative Humidity (non-condensing) Min. 1.5 -40 +5 Max. 20.0 +85 +95 Units V °C % Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see Electrical Characteristics. Note 2: This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (2kV to <4kV). Handling and as - sembly of this device should only be done at ESD protected workstations. General Characteristics Unless otherwise stated, measuring parameters are V R = 5.0 V, -40°C < TA < +85°C, RL = 50 Ω Symbol Parameter Conditions/Comments Values Units Min. Typ. Max. λS max. Wavelength max. Sensitivity 850 nm λ Wavelength Range S = 20 % of Smax 450 1050 nm Sλ Spectral Sensitivity λ = 850nm, VR = 5V, Ie = 1 mW/cm2 λ = 950nm, VR = 5V, Ie = 1 mW/cm2 0.61 0.43 A/W A/W η Quantum Efficiency λ = 850nm, VR = 5V, Ie = 1 mW/cm2 λ = 950nm, VR = 5V, Ie = 1 mW/cm2 90 62 % φ Half angle ±60 ° VO Open Circuit Voltage Ie = 0.5 mW/cm2 250 mV TCV Temperature Coefficient of ISC 0.25 %/K TCO Temperature Coefficient of VO -3.0 mV/K IP Photo Current VR = 5V, Ie = 1 mW/cm2, λ = 850 nm VR = 5V, Ie = 1 mW/cm2, λ = 950 nm 18.7 13.2 μA IR Dark Current VR = 5 V, TA= 20°C VR = 20 V, TA= 20°C Selected types with reduced dark current on request 2 5 20 nA ISC Short-circuit Current Ie = 1 mW/cm2, λ = 850 nm 20 μA tr Rise/Fall Time VR = +1.5 V photo current measured at RL = 50 Ω , λ = 850 nm, IP = 200 μA 300 ns VR = +5.0 V 140 VR = +10.0 V 70 CO Capacitance VR = +5V, ƒ = 100kHz, E = 0 22 pF NEP Noise Equivalent Power VR = 5 V 1.2x10-14 W/√Hz Connection Diagram 5 TOP VIEW 2 3 Cathodes are connected on chip 1 4 Pin Assignment 1 Cathode 2 Cathode 3 Cathode 4 Cathode 5 Anode Figure 2: Chip connections © 2014 ESPROS Photonics Corporation Characteristics subject to change without notice 2 / 6 Datasheet epc200 - V1.2 www.espros.ch |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |