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SW6N60K Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

Part # SW6N60K
Description  N-channel Enhanced mode TO-220FMOSFET
PDF  6 Pages
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Manufacturer  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Direct Link  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW6N60K Datasheet(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
2/6
SW6N60K
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
600
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
0.64
V/oC
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
1
uA
VDS=480V, TC=125oC
50
uA
IGSS
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
3
5
V
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=3A
0.72
0.85
Ω
Gfs
Forward transconductance
VDS=30V, ID=3A
3.5
S
Dynamic characteristics
Ciss
Input capacitance
VGS=0V, VDS=200V, f=1MHz
690
pF
Coss
Output capacitance
18.5
Crss
Reverse transfer capacitance
3.6
td(on)
Turn on delay time
VDS=300V, ID=6A, RG=25Ω,
VGS=10V
(note 4,5)
12
ns
tr
Rising time
30
td(off)
Turn off delay time
34
tf
Fall time
24
Qg
Total gate charge
VDS=520V, VGS=10V, ID=6A
(note 4,5)
17
nC
Qgs
Gate-source charge
4
Qgd
Gate-drain charge
9
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IS
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
6
A
ISM
Pulsed source current
24
A
VSD
Diode forward voltage drop.
IS=6A, VGS=0V
1.4
V
trr
Reverse recovery time
IS=6A, VGS=0V,
dIF/dt=100A/us
276
ns
Qrr
Reverse recovery charge
3.4
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =60mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 6A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.



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