The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without

notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices

product for use in life-support devices and/or systems.

Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

2

05/04/01 rev 1.0

Advanced Data Sheet

670  0+]7UDQVPLW 0L[HU

Absolute Maximum Ratings

Parameters

Value

Unit

Supply Voltage

+6.0

LO Input

+10

dBm

RF Input

+15

dBm

Operating Temperature

-40 to +85

ºC

Storage Temperature

-65 to +150

ºC

Test Conditions

VCC

+5.0V

TA

+25ºC

IF Input

-20 dBm @ 200 MHz

LO Input

0 dBm @ 1760 MHz

Product Specifications – AC Performance

Parameters

Additional Test Conditions

Unit

Min.

Typ.

Max.

RF Frequency Range

MHz

1800

2200

IF Frequency Range

MHz

10

200

300

Output IP3

IF1 = IF2 = -20 dBm/tone

dBm

+15

Output P1dB

dBm

+3.5

Conversion Gain

dB

9

SSB Noise figure

dB

9

RF Return Loss

dB

14

LO Return Loss

dB

14

IF Return Loss

dB

14

LO Drive

dBm

-3

0

+3

Product Specifications – Miscellaneous

Parameters

Additional Test Conditions

Unit

Min.

Typ.

Max.

Supply Voltage

V

+4.75

+5.0

+5.25

Supply Current

mA

190

Thermal Resistance

ºC/W

TBD

Product Specifications – Isolation Performance

Parameters

Additional Test Conditions

Unit

Min.

Typ.

Max.

Leakage (LO-RF)

dBm

-25

Leakage (LO-IF)

dBm

-30