2SA2062 / 2SC5774

No.6987-1/4

Features

•

Large current capacitance.

•

Wide ASO and high durability against breakdown.

•

Adoption of MBIT process.

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(-)160

V

Collector-to-Emitter Voltage

VCEO

(-)140

V

Emitter-to-Base Voltage

VEBO

(-)6

V

Collector Current

IC

(-)10

A

Collector Current (Pulse)

ICP

(-)20

A

Collector Dissipation

PC

2.5

W

Tc=25

°C110

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=(--)160V, IE=0

(--)0.1

mA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0

(--)0.1

mA

DC Current Gain

hFE(1)

VCE=(--)5V, IC=(--)1A

60

160

hFE(2)

VCE=(--)5V, IC=(--)5A

35

Gain-Bandwidth Product

fT

VCE=(--)5V, IC=(--)1A

(10)15

MHz

Output Capacitance

Cob

VCB=(--)10V, f=1MHz

(280)140

pF

Base-to-Emitter Voltage

VBE

VCE=(--)5V, IC=(--)5A

1.5

V

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(--)5A, IB=(--)0.5A

(--0.3)0.2

(--)2.0

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(--)5mA, IE=0

(--)160

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(--)50mA, RBE=∞

(--)140

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=(--)5mA, IC=0

(--)6

V

Turn-On Time

ton

See specified test circuit.

(0.45)0.56

µs

Storage Time

tstg

See specified test circuit.

(1.75)3.3

µs

Fall Time

tf

See specified test circuit.

(0.25)0.4

µs

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6987A

D1503 TS IM TA-100929 / 62501 TS IM TA-3317, 3318

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

2SA2062 / 2SC5774

PNP Epitaxial Planar Silicon Transistor

NPN Triple Diffused Planar Silicon Transistor

140V / 10A, AF70W

Output Applications