72022 datasheet(2/9 Pages) VISHAY

2 / 9 page

Si4370DY

Vishay Siliconix

www.vishay.com

Document Number: 72022

S-32621—Rev. C, 29-Dec-03

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS ID = 250 mA

Ch-1

1.0

3.0

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

Ch-2

0.8

2.0

Gate Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

Ch-1

"100

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

Ch-2

"100

VDS = 30 V VGS = 0 V

Ch-1

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Ch-2

100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V VGS = 0 V TJ = 85_C

Ch-1

VDS = 30 V, VGS = 0 V, TJ = 85_C

Ch-2

2000

On State Drain Currentb

ID( )

VDS = 5 V VGS = 10 V

Ch-1

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Ch-2

VGS = 10 V ID = 7 5 A

Ch-1

0.014

0.022

Drain Source On State Resistanceb

rDS( )

VGS = 10 V, ID = 7.5 A

Ch-2

0.015

0.022

Drain-Source On-State Resistanceb

rDS(on)

VGS = 4 5 V ID = 6 5 A

Ch-1

0.024

0.030

VGS = 4.5 V, ID = 6.5 A

Ch-2

0.020

0.028

Forward Transconductanceb

VDS = 15 V ID = 7 5 A

Ch-1

Forward Transconductanceb

gfs

VDS = 15 V, ID = 7.5 A

Ch-2

Diode Forward Voltageb

VSD

IS = 1 A VGS = 0 V

Ch-1

0.75

1.2

Diode Forward Voltageb

VSD

IS = 1 A, VGS = 0 V

Ch-2

0.47

0.5

Dynamica

Total Gate Charge

Ch-1

Total Gate Charge

Ch-2

11.5

Gate Source Charge

VDS = 15 V VGS = 4 5 V ID = 7 5 A

Ch-1

2.9

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 7.5 A

Ch-2

3.8

Gate Drain Charge

Q d

Ch-1

2.5

Gate-Drain Charge

Qgd

Ch-2

3.5

Gate Resistance

Ch-1

0.5

1.5

1.9

Gate Resistance

Ch-2

0.5

1.8

1.9

Turn On Delay Time

td( )

Ch-1

Turn-On Delay Time

td(on)

Ch-2

Rise Time

Ch-1

Rise Time

VDD = 15 V, RL = 15 W

Ch-2

Turn Off Delay Time

td( ff)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

Ch-1

Turn-Off Delay Time

td(off)

Ch-2

Fall Time

Ch-1

Fall Time

Ch-2

Source Drain Reverse Recovery Time

IF = 1 7 A di/dt = 100 A/ms

Ch-1

Source-Drain Reverse Recovery Time

trr

IF = 1.7 A, di/dt = 100 A/ms

Ch-2

Notes

Guaranteed by design, not subject to production testing.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Forward Voltage Drop

IF = 1.0 A

0.47

0.50

Forward Voltage Drop

IF = 1.0 A, TJ = 125_C

0.36

0.42

Vr = 30 V

0.004

0.100

Maximum Reverse Leakage Current

Irm

Vr = 30 V, TJ = 100_C

0.7

Maximum Reverse Leakage Current

Irm

Vr = −30 V, TJ = 125_C

3.0

Junction Capacitance

Vr = 10 V

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