WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com

April 2004

FH101

Product Description

The FH101 is a high dynamic range FET packaged

in a low cost surface mount package. The device is

available in both the standard SOT-89 package

and the environmentally friendly lead-free and

“green” SOT-89 package. The combination of low

noise figure and high output IP3 at the same bias

point makes it ideal for receiver and transmitter

applications. The FH101 achieves +36 dBm OIP3

at a mounting temperature of 85°C with an associ-

ated MTBF of >100 years. The package is a SOT-

89. All devices are 100% RF and DC tested.

The product is targeted for applications where high

linearity is required.

Product Features

Functional Diagram

4

12

3

Function

Pin No.

Gate

1

Source

2

Drain

3

Source

4

High Dynamic Range FET

Product Information

Ordering Information

Part No.

Description

FH101

FH101-G

1 Product may contain lead-bearing materials. Maximum +235°C reflow temperature.

2 Product does not contain lead-bearing materials. Maximum +260°C reflow temperature. Also

compatible with leaded soldering process.

Absolute Maximum Ratings

Parameter

Rating

Drain to Source Voltage

+6.0 V

Gate to Source Voltage

-6.0 V

Gate Current

4.5 mA

Operating Case Temperature

-40 to +85°C

Storage Temperature

-55 to +125°C

Input RF Power (continuous)

+10 dBm

Operation of this device above any of these parameters may cause permanent damage.

Specifications

DC Electrical Parameter Units

Min.

Typical Max.

Saturated Drain Current, Idss mA

100

140

170

Transconductance, Gm

mS

120

Pinch Off Voltage, Vp

V

-3.0

-1.5

RF Parameter

Units

Min.

Typical Max.

Small Signal Gain, Gss

dB

17

18

Max Stable Gain, Gmsg

dB

23

Output IP3

dBm

32

36

Output P1dB

dBm

18

Noise Figure, NF

7

dB

1.2

Notes:

1. DC and RF parameters measured under the following conditions unless otherwise noted.

25°C with Vds = 5.0 V, Vgs = 0 V, test frequency = 800 MHz, 50 W system.

2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The

suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.

3. Device needs appropriate match to become unconditionally stable.

4. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40°C is +36 dBm.

5. Idss is measured with Vgs = 0 V.

6. Pinch off voltage is measured when Ids = 0.6 mA.

7. Measured with Vds = 3.3 V, 50% Idss.

Typical Parameters

Parameter

Units

Typical

Frequency

MHz

900

1900

S21

dB

19.0

16.0

S11

dB

-10.7

-12.3

S22

dB

-9.7

-17.2

Output IP3

dBm

+38.0

+33.6

Output P1dB

dBm

+18.8

+19.1

Noise Figure

dB

2.7

3.1

Drain Bias Supply

5 V @ 140 mA

Gate Bias

0 V

Typical parameters reflect performance in an application circuit.

Actual Size

Specifications and information are subject to change without notice.