LMH6639MASLASHNOPB datasheet(2/26 Pages) TI1

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LMH6639

SNOS989G – JANUARY 2002 – REVISED MARCH 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

ESD Tolerance

2KV(3)

200V(4)

VIN Differential

±2.5V

Input Current

±10mA

Supply Voltage (V+ – V−)

13.5V

Voltage at Input/Output pins

V+ +0.8V, V−

−0.8V

Storage Temperature Range

−65°C to +150°C

Junction Temperature(5)(6)

+150°C

Soldering Information

Infrared or Convection (20 sec)

235°C

Wave Soldering (10 sec)

260°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

Human body model, 1.5k

Ω in series with 100pF.

(4)

Machine Model, 0

Ω in series with 200pF.

(5)

The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient

temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.

(6)

Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in

exceeding the maximum allowed junction temperature of 150°C.

Operating Ratings

(1)

Supply Voltage (V+ to V−)

3V to 12V

Operating Temperature Range(2)

−40°C to +85°C

Package Thermal Resistance (

θJA)

(2)

SOT-23-6

265°C/W

SOIC-8

190°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics.

(2)

The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient

temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.

3V Electrical Characteristics

Unless otherwise specified, all limits ensured for at TJ = 25°C, V

+ = 3V, V− = 0V, V

O = VCM = V

+/2, and R

L = 2kΩ to V

+/2.

Boldface limits apply at the temperature extremes.

Symbol

Parameter

Conditions

Min(1)

Typ(2)

Max(1)

Units

−3dB BW

AV = +1

120

170

MHz

AV = −1

BW0.1dB

0.1dB Gain Flatness

RF = 2.65kΩ , RL = 1kΩ,

16.4

MHz

FPBW

Full Power Bandwidth

AV = +1, VOUT = 2VPP, −1dB

MHz

V+ = 1.8V, V− = 1.2V

GBW

Gain Bandwidth product

AV = +1

MHz

Input-Referred Voltage Noise

RF = 33kΩ

f = 10kHz

nV/

√Hz

f = 1MHz

Input-Referred Current Noise

RF = 1MΩ

f = 10kHz

1.30

pA/

√Hz

f = 1MHz

0.36

THD

Total Harmonic Distortion

f = 5MHz, VO = 2VPP, AV = +2,

−50

dBc

RL = 1kΩ to V

+/2

(1)

All limits are ensured by testing or statistical analysis.

(2)

Typical values represent the most likely parametric norm.

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