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S8550 Datasheet(PDF) 2 Page - First Components International |
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S8550 Datasheet(HTML) 2 Page - First Components International |
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2 / 2 page ![]() UTC S8550 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-014,A CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 280-400 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics Collector-Emitter voltage ( V) 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 IB=0.5mA IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA Fig.2 DC current Gain Ic,Collector current (mA) 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 VCE=1V Fig.3 Base-Emitter on Voltage 10 -1 10 0 10 1 10 2 Base-Emitter voltage (V) 0 0.2 0.4 0.6 0.8 1.0 VCE=1V Ic,Collector current (mA) 10 3 10 2 10 1 10 0 10 -1 10 1 10 2 10 3 10 4 Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB Ic,Collector current (mA) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 VCE=10V Collector-Base voltage (V) 10 3 10 3 10 0 10 1 10 2 10 0 10 1 10 2 10 3 f=1MHz IE=0 |
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