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S8550 Datasheet(PDF) 1 Page - First Components International |
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S8550 Datasheet(HTML) 1 Page - First Components International |
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1 / 2 page  UTC S8550 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-014,A LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to UTC S8050 TO-92 1 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Dissipation(Ta=25 °C) Pc 1 W Collector Current Ic -700 mA Junction Temperature Tj 150 °C Storage Temperature TSTG -65 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=-100 µA,IE=0 -30 V Collector-Emitter Breakdown Voltage BVCEO Ic=-1mA,IB=0 -20 V Emitter-Base Breakdown Voltage BVEBO IE=-100 µA,Ic=0 -5 V Collector Cut-Off Current ICBO VCB=-30V,IE=0 -1 µA Emitter Cut-Off Current IEBO VEB=-5V,Ic=0 -100 nA DC Current Gain(note) hFE1 hFE2 hFE3 VCE=-1V,Ic=-1mA VCE=-1V,Ic=-150 mA VCE=-1V,Ic=-500mA 100 120 40 110 400 Collector-Emitter Saturation Voltage VCE(sat) Ic=-500mA,IB=-50mA -0.5 V Base-Emitter Saturation Voltage VBE(sat) Ic=500mA,IB=-50mA -1.2 V Base-Emitter Saturation Voltage VBE VCE=-1V,Ic=-10mA -1.0 V Current Gain Bandwidth Product fT VCE=-10V,Ic=-50mA 100 MHz Output Capacitance Cob VCB=10V,IE=0 f=1MHz 9.0 pF |
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