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BTA20F Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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BTA20F Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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2 / 7 page ![]() BTA20F Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 7 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Repetitive peak off-state voltages VDRM/VRRM 600/700 V On-state rms current(full sine wave TC=70℃) IT(RMS) 20 A Non repetitive surge peak on-state current(full cycle, Tj initial = 25 °C) ITSM(F=50Hz t=10ms) 210 A Non repetitive surge peak on-state current(full cycle, Tj initial = 25 °C) ITSM(F=60Hz t=8.3ms) 200 A I2t value for fusing I2t(tp=10ms) 200 A2s Critical rate of rise of on-state current IG =2xIGT, tr≤100 ns(F=50Hz Tj=125℃) dI/dt 50 A/μs Critical rate of rise of on-state current IG =2xIGT, tr≤100 ns(Tj=125℃) 100 Non repetitive peak off-state Voltage(tp = 10 ms Tj = 25° C) VDSM/VRSM VDRM/VRRM + 100 V Peak gate current(tp =20μs Tj=125℃) IGM 4.0 A Peak positive gate voltage(tp =20μs) VGM 16 V Average gate power dissipation(Tj=125℃) PG(AV) 1.0 W Operating junction temperature range Tj -40~125 ℃ Storage junction temperature range Tstg -40~150 ℃ Junction to ambient Rth(j-a) 60 /W ℃ Junction to case for AC Rth(j-c) 2.1 Junction to case for DC Rth(j-c) 2.8 符号 Symbol 测试条件 Test Conditions 信号区 Quadrant BTA20F 单位 Unit BW CW IGT (1) VD=12V RL=33Ω ALL Min. 2.0 1.0 mA Max. 50 35 VGT ALL Max. 1.5 V VGD VD=VDRM RL=3.3KΩ Tj=125℃ ALL Min. 0.2 V IH (2) IT=500mA,gate open Max. 75 50 mA IL IG=1.2IGT I-III Typ. 50 - mA II 90 - I- II -III Max. - 80 dV/dt (2) VD = 67 % VDRM ,gate open Tj = 125° C Typ. 750 500 V/μs Min. 500 250 (dV /dt)c (2) (dI/dt)c = 20A/ms Tj = 125° C Typ. 36 22 V/μs Min. 18 11 Note 1:minimum IGT is guaranted at 5% of IGT max. Note 2:for both polarities of A2 referenced to A1. 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) |
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