2SB776 datasheet(2/6 Pages) FOSHAN

2 / 6 page

2SB776

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-50

Collector to Emitter Voltage

VCEO

-50

Emitter to Base Voltage

VEBO

-5.0

Collector Current - Continuous

-3.0

Peak Collector Current – Continuous

ICM

-7.0

Base Current - Continuous

-0.6

Collector Power Dissipation

PC (Tc=25 )

℃

Collector Power Dissipation

1.0

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-100μA

IE=0

-50

Collector to Emitter Breakdown

Voltage

VCEO

IC=-5mA

IB=0

-50

Emitter to Base Breakdown

Voltage

VEBO

IE=-100μA

IC=0

-5.0

Collector Cut-Off Current

ICBO

VCB=-50V

IE=0

-1.0

μA

Emitter Cut-Off Current

IEBO

VEB=-3.0V

IC=0

-1.0

μA

DC Current Gain

hFE(1)

VCE=-2.0V

IC=-1.0A

100

400

hFE(2)

VCE=-2.0V

IC=-20mA

100

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=-2.0A

IB=-200mA

-0.5

Base to Emitter Saturation Voltage VBE(sat)

IC=-2.0A

IB=-200mA

-2.0

Transition Frequency

VCE=-5.0V

IC=-100mA

MHz

Reverse Transfer Capacitance

COb

VCB=-10V

IE=0

fT=1.0MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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