1/11

ASB Inc.

 sales@asb.co.kr  Tel: +82-42-528-7225

April 2017

ASW212

5 ~ 8000 MHz MMIC Amplifier

Parameters

Units

Typical

Frequency

MHz

900

2000

3500

5800

Gain

dB

14.0

12.5

11.0

11.0

S11

dB

-11

-11

-9

-18

S22

dB

-16

-14

-15

-15

dBm

35.0

34.0

28.0

26.5

Noise Figure

dB

5.0

5.5

5.9

5.6

Output P1dB

dBm

18

18

17

16

Current

mA

73

73

73

73

Device Voltage

V

+4.8

+4.8

+4.8

+4.8

1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz.

Parameters

Units

Min

Typ

Max

Testing Frequency

MHz

900

Gain

dB

13

14

S11

dB

-11

S22

dB

-16

Output IP3

dBm

33

35

Noise Figure

dB

5.0

5.5

Output P1dB

dBm

17

18

Current

mA

68

73

90

Device Voltage

V

+4.8

Parameters

Rating

Operating Case Temperature

-40 to

85 C

Storage Temperature

-40 to

150 C

Device Voltage

+6 V

Operating Junction Temperature

+150

C

Input RF Power (CW, 50

 matched)

+25 dBm

Thermal Resistance

158

C/W

Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf

Features

Description

Typical Performance

Absolute Maximum Ratings



14 dB Gain at 900 MHz



18 dBm P1dB at 900 MHz



35 dBm Output IP3 at 900 MHz



5.0 dB NF at 900 MHz



MTTF > 100 Years



Single Supply

The ASW212, a power amplifier MMIC, has a high

linearity, high gain, and high efficiency over a wide

range of frequency, being suitable for use in both

receiver and transmitter of telecommunication sys-

tems up to 8 GHz. The amplifier is available in a

SOT89 package and passes through the stringent

DC, RF, and reliability tests.

Application Circuit

Product Specifications

ASW212

Package Style: SOT89

Pin Configuration

Pin No.

Function

1

RF IN

2

GND

3

RF OUT / Bias