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ASW212 Datasheet(PDF) 10 Page - Advanced Semiconductor Business Inc. |
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ASW212 Datasheet(HTML) 10 Page - Advanced Semiconductor Business Inc. |
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10 / 11 page ![]() 10/11 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 April 2017 ASW212 5 ~ 8000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. 2) OIP2 is measured with two tones (100MHz, 800MHz) at an output power of +0 dBm/tone, 700MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 70 900 1800 2700 Magnitude S21 (dB) 17.5 14.0 12.5 11.5 Magnitude S11 (dB) -18 -13 -14 -10 Magnitude S22 (dB) -11 -11 -12 -14 Output P1dB (dBm) 18 18 17.5 18 Output IP31) (dBm) 36 35 34 33 Output IP22) (dBm) 52 Noise Figure (dB) 4.7 5.1 5.5 5.6 Device Voltage (V) +4.8 +4.8 +4.8 +4.8 Current (mA) 73 73 73 73 ONU 70 ~ 2700 MHz +5 V C1=1000 pF L1=680 nH C2=1000 pF Vcc=5 V RF IN RF OUT C3=100pF C4=1 F ASW212 D1=5.6V Zener Diode R1=2.7 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 -25 -20 -15 -10 -5 0 Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 -20 -15 -10 -5 0 Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency (MHz) |
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