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BBA02 Datasheet(PDF) 1 Page - BeRex Corporation

Part # BBA02
Description  40-6000 MHz BroadBand AMP
PDF  21 Pages
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Manufacturer  BEREX [BeRex Corporation]
Direct Link  http://www.berex.com
Logo BEREX - BeRex Corporation

BBA02 Datasheet(HTML) 1 Page - BeRex Corporation

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40-6000 MHz BroadBand AMP
BBA02
Rev. A
BeRex
●website: www.berex.com
●email: sales@berex.com
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2017 BeRex
Gain = 15.6 dB @ 2140MHz
OIP3 = 35.0 dBm @ 2140 MHz
Output P1 dB = 23.2 dBm @ 2140 MHz
N.F = 2.9dB @ 2140 MHz
Internally matched to 50 ohms
Lead-free/RoHS-compliant SOT-89 SMT package
The BBA02 is a BroadBand, GaAs E-pHEMT Ampli-
fier that is ideal for applications demanding high
linearity in a wideband of 40-6000 MHz. The
BBA02 is internally matched to 50 Ohms and re-
quires no external matching components. It is
available in RoHS-compliant SOT-89 SMT package.
These devices are 100% DC and RF tested to as-
sure quality and performance.
Product Description
Device Features
Repeaters
Mobile Infrastructure
Defense/Aerospace
LTE / WCDMA / EDGE / CDMA
General Purpose Wireless
IF amplifier, RF driver amplifier
Applications
Applications Circuit
1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.
Typical Performance
1
Absolute Maximum Ratings
Parameter
Frequency
Unit
70
900
2140
5800
MHz
3500
Gain
17.2
16.6
15.6
13.5
dB
14.5
S11
-13.6
-17.0
-15.7
-25.5
dB
-12.5
S22
-15.8
-22.0
-22.5
-28.0
dB
-24.5
OIP3
2
36.5
38.0
35.0
28.5
dBm
33.0
P1dB
22.6
23.1
23.2
17.2
dBm
21.2
LTE 20M ACLR
13.1
12.7
11.5
10.0
6.2
dBm
Noise Figure
2.8
2.4
2.9
5.2
dB
3.2
Parameter
Rating
Unit
Storage Temperature
-55 to +155
°C
Junction Temperature
+220
°C
Operating Voltage
+7
V
Supply Current
190
mA
Input RF Power
20
dBm
Operation of this device above any of these parameters may result in permanent damage.
BBA02
C1
L1
C3
C4
C2
RFin
RFout
+5V
2 OIP3 _ measured on two tones with a output power 5dBm/ tone , F2—F1 = 1 MHz.
BOM
@GHz
0.04~0.5
0.5~3.0
3.0~4.0
5.0~6.0
4.0~5.0
C1
1nF
100pF
10pF
10pF
10pF
C2
1nF
100pF
10pF
10pF
10pF
C3
100pF
100pF
100pF
100pF
100pF
C4
1nF
1nF
1nF
1nF
1nF
L1
470nH
39nH
15nH
4.7nH
8.2nH
Min.
Typical
Max.
Unit
Bandwidth
40
6000
MHz
Id @ (Vd = 5V)
76
90
103
mA
Vd
5.0
V
dG/dT
-0.004
dB/°C
RTH
53.5
°C/W
Operating Case Temperature
-40
+105
°C
BB
A0
2
- LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±20MHz offset, PAR 9.75 at 0.01% Prob.
*ACLR Channel Power measured at -50dBc.


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