SCG3139K datasheet(1/3 Pages) SECOS

Part #	SCG3139K

Description	-0.66 A, -20 V, RDS(O%) 520 m(ohm) P Channel Enhancement MOSFET

PDF	3 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 3 page

Elektronische Bauelemente

SCG3139K

-0.66 A, -20 V, RDS(O ) 520 mΩ

Ω

P Channel Enhancement MOSFET

16-Jan-2017 Rev.A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low on-resistance

Fast switching speed

Drive circuits can be simple

Parallel use is easy

Low voltage drive makes this device ideal for

portable equipment

APPLICATION

Interfacing

Switching

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-523

3K

7 inch

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

1

ID

-0.66

A

Pulsed Drain Current (tp=10µs)

IDM

-1.2

A

Total Power Dissipation

1

PD

150

mW

Lead Temperature for Soldering Purposes

(1/8” from case for 10S)

TL

260

°C

Operating Junction & Storage Temperature Range

TJ, TSTG

150, -55~150

°C

Thermal Resistance Ratings

Thermal Resistance Junction-ambient

1

RθJA

833

°C / W

Notes:

1.

Surface mounted on FR4 board using the minimum recommended pad size.

39K

Top View

A

L

M

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.5

1.7

G

-

0.1

B

1.45

1.75

H

0.55 REF.

C

0.7

0.9

J

0.1

0.2

D

0.7

0.9

K

-

E

0.9

1.1

L

0.5 TYP.

F

0.15

0.35

M

0.25

0.35

SOT-523

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