3005 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SDT3005

5A, 30V, RDS(ON) 42 mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

01-Jul-2016 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Gate-Source Leakage Current

IGSS

±10

µA

VGS= ±10V, VDS=0

Drain-Source Leakage Current

IDSS

µA

VDS=30V, VGS=0

Gate-Threshold Voltage

VGS(th)

0.6

VDS=VGS, ID=250µA

Forward Transconductance

gfs

VDS=5V, ID=4A

Diode Forward Voltage

VSD

IS=1A, VGS=0

VDS=10V, ID=5A

VDS=4.5V, ID=5A

Static Drain-Source On-Resistance

RDS(ON)

VGS=2.5V, ID=4A

Dynamic Characteristics

Input Capacitance

Ciss

245

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=15V

VGS=0V

f=1MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

0.5

Gate-Drain Charge

Qgd

ID=4A

VDS=15V

VGS=10V

Turn-On Delay Time

Td(on)

Rise Time

3.5

Turn-Off Delay Time

Td(off)

Fall Time

3.5

VDD=15V

VGS=10V

RL= 3.75

RGEN=3

Notes:

Repetitive rating：Pulse width limited by junction temperature.

Pulse Test: Pulse With≦300µs, duty cycle≦2%.

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