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72021 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # 72021
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PDF  6 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

72021 Datasheet(HTML) 2 Page - Vishay Siliconix

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Si4830ADY
Vishay Siliconix
www.vishay.com
2
Document Number: 72021
S-32621—Rev. D, 29-Dec-03
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.8
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 30 V VGS = 0 V
Ch-1
1
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Ch-2
100
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V VGS = 0 V TJ = 85_C
Ch-1
15
mA
VDS = 30 V, VGS = 0 V, TJ = 85_C
Ch-2
2000
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
20
A
Drain Source On State Resistanceb
rDS( )
VGS = 10 V, ID = 7.5 A
0.017
0.022
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 6.5 A
0.024
0.030
W
Forward Transconductanceb
gfs
VDS = 15 V, ID = 7.5 A
19
S
Diode Forward Voltageb
VSD
IS = 1 A VGS = 0 V
Ch-1
0.75
1.2
V
Diode Forward Voltageb
VSD
IS = 1 A, VGS = 0 V
Ch-2
0.47
0.5
V
Dynamica
Total Gate Charge
Qg
7
11
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 4.5 V, ID = 7.5 A
2.9
nC
Gate-Drain Charge
Qgd
DS
, GS
, D
2.5
Gate Resistance
Rg
0.5
1.5
2.4
W
Turn-On Delay Time
td(on)
9
15
Rise Time
tr
VDD = 15 V, RL = 15 W
10
17
Turn-Off Delay Time
td(off)
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
19
30
ns
Fall Time
tf
9
15
ns
Source Drain Reverse Recovery Time
t
IF = 1 7 A di/dt = 100 A/ms
Ch-1
35
55
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, di/dt = 100 A/ms
Ch-2
32
55
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
VF
IF = 1.0 A
0.47
0.50
V
Forward Voltage Drop
VF
IF = 1.0 A, TJ = 125_C
0.36
0.42
V
Vr = 30 V
0.004
0.100
Maximum Reverse Leakage Current
Irm
Vr = 30 V, TJ = 100_C
0.7
10
mA
g
rm
Vr = −30 V, TJ = 125_C
3.0
20
Junction Capacitance
CT
Vr = 10 V
50
pF



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