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SMS123 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMS123 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Elektronische Bauelemente SMS123 0.17A, 100V, RDS(ON) 6 N-Ch Enhancement Mode Power MOSFET 28-Apr-2017 Rev. C Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS123 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source Voltage VDS 100 V Gate – Source Voltage VGS ±20 V Continuous Drain Current 1 ID 0.17 A Pulsed Drain Current(tp=10µs) IDM 0.68 A Continuous Source-Drain Diode Current IS 0.17 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient 1 RθJA 357 °C / W Lead Temperature for Soldering Purposes (1/8’’ from case for 10s) TL 260 °C Operating Junction & Storage Temperature Range TJ, TSTG 150, -55~150 °C SOT-23 B123 Top View A L C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0.09 0.18 B 2.10 2.65 H 0.35 0.65 C 1.20 1.40 J 0.08 0.20 D 0.89 1.17 K 0.6 REF. E 1.78 2.04 L 0.95 BSC. F 0.30 0.50 |
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