Elektronische Bauelemente

SMS123

N-Ch Enhancement Mode Power MOSFET

28-Apr-2017 Rev. C

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static Characteristics

Drain-Source Breakdown Voltage

100

-

-

V

-

-

1

µA

Zero Gate Voltage Drain Current

-

-

10

nA

Gate-Source Leakage

-

-

±50

nA

Gate-Threshold Voltage

2

1

1.6

2.8

V

-

-

6

Drain-Source On Resistance

2

-

-

10

Forward Transfer conductance

2

80

-

-

mS

Body-Drain Diode Ratings

Diode Forward On–Voltage

-

-

1.3

V

Dynamic Characteristics

Input Capacitance

-

29

41

Output Capacitance

-

10

14

Reverse Transfer Capacitance

-

2

2.8

pF

f=1MHz

Switching Characteristics

3

Total Gate Charge

-

1.4

-

Gate-to-Source Charge

-

0.15

-

Gate-to-Drain Charge

-

0.2

-

nC

Turn-on Delay Time

-

8

-

Rise Time

-

8

-

Turn-off Delay Time

-

13

-

Fall Time

-

16

-

nS

Notes:

1. Surface mounted on FR4 Board using the minimum recommended pad size.

2. Pulse Test : Pulse width=300µs, duty cycle≦2％

3. Switching characteristics are independent of operating junction temperature.