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SMS2009E Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMS2009E Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() Elektronische Bauelemente SMS2009E 0.9A , 20V , RDS(O ) 350mΩ Ω Ω Ω -Ch Enhancement Mode Power MOSFET 12-Apr-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. W28 = Date Code RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS2009E is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. FEATURES Reliable and Rugged Green Device Available ESD Protection MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch MAXIMUM RATINGS (T A=25°C unless otherwise specified) Rating Parameter Symbol 10s Steady state Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V TA=25°C 0.9 0.8 Continuous Drain Current 1,V GS=4.5V TA=70°C ID 0.72 0.64 A Pulsed Drain Current 2 IDM 1.8 A Power Dissipation TA=25°C PD 0.38 W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating t 10s , 325 ≦ Thermal Resistance Junction-ambient 1 RθJA Steady state , 385 Thermal Resistance Junction-ambient RθJA 525 Thermal Resistance Junction-case 1 RθJC 300 °C / W SOT-23 Top View A L C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0 0.18 B 2.10 2.95 H 0.55 REF. C 1.20 1.7 J 0.08 0.20 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50 |
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