SMS2009E datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMS2009E

0.9A , 20V , RDS(O ) 350mΩ

Ω

-Ch Enhancement Mode Power MOSFET

12-Apr-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

Gate-Threshold Voltage

VGS(TH)

0.45

VDS=VGS, ID=250µA

Gate-Source Leakage Current

IGSS

±10

VDS=0V, VGS= ±10V

VDS=20V, VGS=0V, TJ=25°C

Zero Gate Voltage Drain Current

IDSS

µA

VDS=16V, VGS=0V, TJ=70°C

265

350

VGS=4.5V, ID=650mA

325

660

VGS=2.5V, ID=500mA

Drain-Source On Resistance

RDS(ON)

370

2000

VGS=1.8V, ID=500mA

Total Gate Charge

1.3

Gate-to-Source Charge

Qgs

0.5

Gate-to-Drain (“Miller”) Charge

Qgs

0.1

VDS=15V

VGS=4.5v

IDS=0.5A

Turn-on Delay Time

Td(on)

2.6

Rise Time

Turn-off Delay Time

Td(off)

29.8

Fall Time

VDD=10V

I DS=0.5A

VGS=10V

RGEN=1

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=10V

VGS=0V

f=1MHz

Source-Drain Diode

Continuous Source Current

0.9

Pulsed Source Current

ISM

1.8

Diode Forward Voltage

VSD

0.8

VGS=0V, IS=0.15A, TJ=25°C

Reverse Recovery Time

trr

4.9

Reverse Recovery Charge

Qrr

IF=0.5A,dI/dt=100A/µs,

TJ=25°C

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

The power dissipation is limited by 150

℃ junction temperature, tp=10µs, Duty Cycle=1%

The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

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