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SMS2301 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMS2301 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SMS2301 -3.1A , -20V , RDS(ON) 75mΩ Ω Ω Ω P-Channel Enhancement Mode Power MOSFET 01-Mar-2017 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS2301 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2301 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super low Gate Charge Green Device Available MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Continuous Gate-Source Voltage VGS ±12 V TA=25°C -3.1 Continuous Drain Current 1, V GS@ -4.5V TA=70°C ID -2.5 A Pulsed Drain Current 2 IDM -15.5 A Total Power Dissipation 1 TA=25°C P D 1 W Operating Junction & Storage Temperature Range TJ, TSTG 150, -55~150 °C Thermal Resistance Rating t≦5sec 125 Thermal Resistance from Junction to Ambient 1 Steady State 250 Thermal Resistance from Junction to Ambient RθJA 300 °C/W S1 1 2 3 SOT-23 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0 0.18 B 2.10 2.95 H 0.55 REF. C 1.20 1.7 J 0.08 0.20 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50 |
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