SMS2301 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMS2301

-3.1A , -20V , RDS(ON) 75mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

01-Mar-2017 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID= -250µA

TJ=25°C

-1

Drain-Source Leakage Current

TJ=55°C

IDSS

-5

µA

VGS=0, VDS= -16V

Gate-Source Leakage Current

IGSS

±100

VGS=±12V, VDS=0

Gate-Source Threshold Voltage

VGS(th)

-0.5

-1.2

VDS=VGS, ID= -250µA

VGS= -4.5V, ID= -3A

Static Drain-Source On Resistance

RDS(ON)

105

VGS= -2.5V, ID= -2A

Forward Transfer Conductance

gFS

VDS= -5V, ID= -3A

Total Gate Charge

9.7

Gate-Source Charge

Qgs

2.05

Gate-Drain (“Miller”) Charge

Qgd

2.43

VDS= -15V

VGS= -4.5V

ID= -3A

Turn-On Delay Time

Td(ON)

4.8

Rise Time

9.6

Turn-Off Delay Time

Td(OFF)

Fall Time

8.4

ID= -3A

VDS= -10V

VGS= -4.5V

RG=3.3

Input Capacitance

Ciss

686

Output Capacitance

Coss

90.8

Reverse Transfer Capacitance

Crss

80.4

VDS= -15V

VGS=0

f=1MHz

Source Drain Diode

Continuous Source Current

-3.1

Pulsed Source Current

ISM

-15.5

Forward On Voltage

VSD

-0.7

-1.2

IS = -1A, VGS=0

Reverse Recovery Time

trr

8.4

Reverse Recovery Charge

Qrr

3.3

IF= -3A, dl/dt=100A/uS, TJ=25°C

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2oz copper.

The power dissipation is limited by 150°C junct ion temperature.

The data tested by pulsed , pulse width≦300us , duty cycle≦2%.

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