Elektronische Bauelemente

SMS2301R

Ω

Ω

Ω

P-Channel Enhancement MOSFET

24-May-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

-20

-24

-

V

Zero Gate Voltage Drain Current

-

-

-1

µA

Gate-Source Leakage Current

-

-

±100

nA

On Characteristics

3

Gate-Source Threshold Voltage

-0.4

-0.7

-1

V

-

64

110

Static Drain-Source On Resistance

-

89

140

m

Forward Transconductance

-

5

-

S

Dynamic Characteristics

Input Capacitance

-

405

-

Output Capacitance

-

75

-

Reverse Transfer Capacitance

-

55

-

pF

f=1MHz

Switching Characteristics

Turn-On Delay Time

-

11

-

Rise Time

-

35

-

Turn-Off Delay Time

-

30

-

Fall Time

-

10

-

nS

Total Gate Charge

-

3.3

-

Gate-Source Charge

-

0.7

-

Gate-Drain (“Miller”) Charge

-

1.3

-

nC

Source-Drain Diode Characteristics

Continuous Current

2

-

-

-3

A

Forward Voltage

3

-

-

-1.2

V

Notes:

1.

Repetitive Rating: Pulse width is limited by the maximum junction temperature.

2.

Surface mounted on a 1 inch

3.

Pulse Test: Pulse width≦300µs, duty cycle≦2%.