Elektronische Bauelemente

SMS2333

Ω

Ω

Ω

P-Channel Enhancement Mode Power MOSFET

27-Jun-2014 Rev.A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SMS2333 provide the designer with the best

combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness. The SOT-23 package

is universally preferred for all commercial-industrial surface

mount applications and suited for low voltage applications

such as DC/DC converters.

FEATURES

Lower Gate Charge

Simple Drive Requirement

Fast Switching Characteristic

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

3K

7 inch

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

-12

V

Gate-Source Voltage

±8

V

Continuous Drain Current

1

-6

A

Pulsed Drain Current (t=300µs)

-20

A

Maximum Power Dissipation

2

0.35

Maximum Power Dissipation

1

1.1

W

Thermal Resistance Junction-Ambient

2

357

Thermal Resistance Junction-Ambient

1

113

°C / W

Operating Junction & Storage Temperature

150, -55~150

°C

Note：

1.

Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side.

2.

Device mounted on no heat sink.

SOT-23

S33

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

0.09

0.18

B

2.10

2.65

H

0.35

0.65

C

1.20

1.40

J

0.08

0.20

D

0.89

1.17

K

0.6 REF.

E

1.78

2.04

L

0.95 BSC.

F

0.30

0.50

1

2

3