SMS2333 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SMS2333

-6A , -12V , RDS(ON) 28 mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

27-Jun-2014 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

V(BR)DSS

-12

VGS=0, ID= -250µA

Gate-Threshold Voltage

VGS(th)

-0.4

-1

VDS=VGS, ID= -250µA

Gate-Source Leakage Current

IGSS

±0.1

µA

VGS= ±8V, VDS=0

Drain-Source Leakage Current

IDSS

-1

µA

VDS= -12V, VGS=0

Forward Tranconductance

gfs

VDS= -5V, ID= -5A

VDS= -4.5V, ID= -5A

VDS= -3.7V, ID= -4.6A

VGS= -2.5V, ID= -4.3A

VGS= -1.8V, ID= -1A

Static Drain-Source On-Resistance

RDS(ON)

150

VGS= -1.5V, ID= -0.5A

Dynamic Parameters

Total Gate Charge

Gate-Source Charge

Qgs

2.3

Gate-Drain Change

Qgd

3.6

ID= -5A VDS= -6V

VGS= -4.5V

Input Capacitance

Ciss

1275

Output Capacitance

Coss

255

Reverse Transfer Capacitance

Crss

236

VGS =0

VDS= -6V

f =1.0MHz

Gate Resistance

1.9

f =1.0MHz

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD= -6V

VGEN= -4.5V

ID= -4A

RGEN=1

RL=6

Source-Drain Diode

Forward Current

-1.4

TC = 25°C

Pulsed Forward Current

ISM

-20

Forward Voltage

VDS

-1.2

VGS =0, IS= -4A

Reverse Recovery Time

Trr

Reverse Recovery Charge

Qrr

IF= -4A, dl/dt=100A/µs

Note:

Pulse Test : Pulse width≦300µs, duty cycle≦2%.

Guaranteed by design, not subject to production testing.

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