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SMS3404 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SMS3404
Description  N-Channel Enhancement Mode Power MOSFET
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMS3404 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SMS3404
5.8A, 30V, RDS(ON) 30 mΩ
N-Channel Enhancement Mode Power MOSFET
01-Dec-2015 Rev.A
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SMS3404 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is suitable
for the use as a load switch or in PWM applications. The source
leads are separated to allow a Kelvin connection to the source,
which may be used to bypass the source inductance.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (t≦10s)
ID
5.8
A
Pulsed Drain Current
1
IDM
30
A
Thermal Resistance from Junction to Ambient
RθJA
357
°C / W
Operating Junction and Storage Temperature
TJ, TSTG
150, -55~150
°C
Notes:
1.
Repetitive rating : Pulse width is limited by the maximum junction temperature.
SOT-23
R4
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.80
3.04
G
0.09
0.18
B
2.10
2.55
H
0.45
0.60
C
1.20
1.40
J
0.08
0.177
D
0.89
1.15
K
0.6 REF.
E
1.78
2.04
L
0.89
1.02
F
0.30
0.50


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