SMS3404 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SMS3404

5.8A, 30V, RDS(ON) 30 mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

01-Dec-2015 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Drain-Source Leakage Current

IDSS

µA

VDS=30V, VGS=0

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V, VDS=0

Gate-Threshold Voltage

VGS(th)

1.4

VDS=VGS, ID=250µA

VDS=10V, ID=5.8A

Static Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=4.8A

Forward Transconductance

gfs

VDS=5V, ID=5.8A

Diode Forward Voltage

VSD

IS=1A

Dynamic Characteristics

Input Capacitance

Ciss

820

Output Capacitance

Coss

118

Reverse Transfer Capacitance

Crss

VGS =0

VDS=15V

f =1.0MHz

Gate Resistance

1.5

VGS= VDS=0, f =1.0MHz

Switching Characteristics

Turn-on Delay Time

Td(on)

6.5

Rise Time

3.1

Turn-off Delay Time

Td(off)

15.1

Fall Time

2.7

VDS=15V

VGS=10V

RGEN=3

RL=2.6

Notes:

Pulse Width≤300µs, Duty Cycle ≤ 0.5%.

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