SSD40P04J datasheet(1/3 Pages) SECOS

Part #	SSD40P04J

Description	P-Ch Enhancement Mode Power MOSFET

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 3 page

Elektronische Bauelemente

SSD40P04J

-40A, -40V, RDS(ON) 14 m

P-Ch Enhancement Mode Power MOSFET

13-Dec-2016 Rev.B

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

TO-252(D-Pack)

CJU40P04

A

C

D

N

O

P

G E

F

H

K

J

M

B

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

SSD40P04J uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge.

This device is well suited for high current load applications.

FEATURES

High density cell design for ultra low RDS(ON)

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

APPLICATIONS

Power switching applications

Hard switched and high frequency circuits

Uninterruptible power supply

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

TO-252

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-40

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

-40

A

Pulsed Drain Current

IDM

-160

A

Single Pulsed Avalanche Energy

1

EAS

544

mJ

Power Dissipation

PD

1.25

W

Thermal Resistance from Junction to Ambient

RθJA

100

°C / W

Lead Temperature for Soldering Purposes@ 1/8’’ from

case for 10s

TL

260

°C

Junction and Storage Temperature Range

TJ, TSTG

150, -55~150

°C

Notes:

1.

EAS condition: VDD=20V, L=1mH, RG=25 , Starting TJ=25°C

1

Gate

3

Source

2

Drain

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.35

6.90

J

2.336 REF.

B

4.95

5.50

K

0.89 REF.

C

2.10

2.50

M

0.50

1.14

D

0.43

0.9

N

1.3

1.8

E

6.0

7.5

O

0

0.13

F

2.90 REF

P

0.58 REF.

G

5.40

6.40

H

0.60

1.20

Date Code

Similar Part No. - SSD40P04J

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	SSD40P04-20D	412Kb / 5P	P-Ch Enhancement Mode Power MOSFET
	SSD40P04-20DE	1Mb / 4P	P-Ch Enhancement Mode Power MOSFET
	SSD40P04	1Mb / 4P	-36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET
	SSD40P04	412Kb / 5P	P-Ch Enhancement Mode Power MOSFET

More results

Similar Description - SSD40P04J

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	SSD20P06-135D	396Kb / 4P	P-Ch Enhancement Mode Power MOSFET
	SSD30P06-45D	354Kb / 4P	P-Ch Enhancement Mode Power MOSFET
	SSD50P03-09D	151Kb / 2P	P-Ch Enhancement Mode Power MOSFET
	SSG4463P	625Kb / 4P	P-Ch Enhancement Mode Power MOSFET
	SSG4935P	464Kb / 4P	P-Ch Enhancement Mode Power MOSFET
	SSRF50P04-16	144Kb / 2P	P-Ch Enhancement Mode Power MOSFET
	SSD40P04-20DE	1Mb / 4P	P-Ch Enhancement Mode Power MOSFET
	SSD20P15	447Kb / 4P	P-Ch Enhancement Mode Power MOSFET
	SSG4841P	151Kb / 2P	P-Ch Enhancement Mode Power MOSFET
	SSG4935P	464Kb / 4P	P-Ch Enhancement Mode Power MOSFET

More results

SSD40P04J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

SSD40P04J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - SSD40P04J

Similar Description - SSD40P04J

Html Pages

1 2 3

Datasheet Download

Link URL