SSD40P04J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSD40P04J

-40A, -40V, RDS(ON) 14 m

P-Ch Enhancement Mode Power MOSFET

13-Dec-2016 Rev.B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

-40

VGS=0, ID= -250µA

Drain-Source Leakage Current

IDSS

-1

µA

VDS= -40V, VGS=0

Gate-Source Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

-1.5

-1.85

-3

VDS=VGS, ID= -250µA

Static Drain-Source On-Resistance

RDS(ON)

VGS= -10V, ID= -12A

Forward Transconductance

gfs

VDS= -5V, ID= -12A

Dynamic Characteristics

Input Capacitance

Ciss

2960

Output Capacitance

Coss

370

Reverse Transfer Capacitance

Crss

310

VDS= -20V

VGS=0V

f=1MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Charge

Qgd

VDS= -20V

VGS= -10V

ID= -12A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD= -20V

VGS= -10V

RG=3

ID= -20A

Source-Drain Diode Characteristics

Drain-Source Diode Forward Voltage

VSD

-1.2

IS= -20A, VGS=0

Continuous Drain-Source Diode

Forward Current

-40

Pulsed Drain-Source Diode

Forward Current

ISM

-160

Notes:

Pulse Test: Pulse width≦300µs, duty cycle≦2%.

The surface of the device is mounted on a FR4 board, t≦10sec.

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