Elektronische Bauelemente

SSD80N03

N-Ch Enhancement Mode Power MOSFET

09-Jan-2015 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

30

-

-

V

Gate-Threshold Voltage

1.0

-

2.5

V

Forward Transconductance

-

43

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

1

Drain-Source Leakage Current

-

-

5

µA

-

-

5.5

Static Drain-Source On-Resistance

2

-

-

8

m

Total Gate Charge

-

20

-

Gate-Source Charge

-

7.6

-

Gate-Drain (“Miller”) Change

-

7.2

-

nC

Turn-on Delay Time

-

7.8

-

Rise Time

-

15

-

Turn-off Delay Time

-

37.3

-

Fall Time

-

10.6

-

nS

Input Capacitance

-

2295

-

Output Capacitance

-

267

-

Reverse Transfer Capacitance

-

210

-

pF

f =1.0MHz

Guaranteed Avalanche Characteristics

Single Pulse Avalanche Energy

5

EAS

63

-

-

mJ

Source-Drain Diode

Diode Forward Voltage

2

-

-

1

V

Continuous Source Current

1,6

-

-

80

A

Pulsed Source Current

2,6

-

-

160

A

Reverse Recovery Time

-

14

-

nS

Reverse Recovery Charge

-

5

-

nC

Notes:

1.

The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.

The data tested by pulsed , pulse width≦300µs , duty cycle≦2%

3.

4.

The power dissipation is limited by 150°C junct ion temperature

5.

The Min. value is 100% EAS tested guarantee.

6.