SSF319W datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSF319W

50V, 200mA, RDS(ON) 3.5

N-Ch Enhancement Mode Power MOSFET

26-Feb-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

0.1

VDS=25V, VGS=0

Drain-Source Leakage Current

IDSS

0.5

µA

VDS=50V, VGS=0

Forward Gate-Body

Leakage Current

IGSSF

µA

VGS=20V

Reverse Gate-Body

Leakage Current

IGSSR

-10

µA

VGS= -20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

0.5

1.5

VDS=VGS, ID=1mA

5.6

VGS=2.75V, ID<200mA,

TA= -40°C ~85°C

Static Drain-Source

On-Resistance

RDS(ON)

3.5

VGS=5V, ID=200mA

Forward Transconductance

gfs

100

VDS=25V, ID=200mA, f=1KHz

Switch Characteristics

Turn-on Delay Time

Td(on)

3.8

Turn-off Delay Time

Td(off)

VDD=30V

VGEN=10V

RG=25

RL=60

ID=500mA

Dynamic Characteristics

Input Capacitance

Ciss

22.8

Output Capacitance

Coss

3.5

Reverse Transfer Capacitance

Crss

2.9

VGS=0

VDS=25V

f=1MHz

Notes:

On a 1×0.75×0.062 inch FR4-board.

Pulse Test: Pulse width≦300 µs, duty cycle≦2%.

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