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SSG4410J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4410J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente SSG4410J 7.5A, 30V, RDS(ON) 13.5 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 08-May-2017 Rev. C Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G Q4410 = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SSG4410J uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for the use as a low side switch in Notebook CPU core power conversion. FEATURES Battery switch Load switch MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 4K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 7.5 A Pulsed Drain Current IDM 50 A Single Pulse Avalanche Energy 1 EAS 72 mJ Power Dissipation PD 1.4 W Thermal Resistance from Junction to Ambient RθJA 89 °C / W Lead Temperature for Soldering Purposes@1/8’’ from case for 10s TL 260 °C Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C Notes: 1. EAS condition: VDD=50V, L=0.5mH, RG=25 , Starting TJ=25°C. SOP-8 G S S S D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.33 0.51 B 4.700 5.10 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.17 0.25 N 0.25 REF. G 1.27 TYP. |
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