SSG4410J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSG4410J

7.5A, 30V, RDS(ON) 13.5 mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

08-May-2017 Rev. C

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Zero Gate Voltage Drain Current

IDSS

µA

VDS=30V, VGS=0

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS=±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

13.5

VGS=10V, ID=10A

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=5A

Forward Transfer Conductance

Gfs

VDS=15V, ID=5A

Dynamic Characteristics

Input Capacitance

Ciss

9130

Output Capacitance

Coss

625

Reverse Transfer Capacitance

Crss

387

VDS=15V

VGS=0

f=1MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

5.5

Gate-Drain (“Miller”) Charge

Qgd

3.7

VDS=15V

VGS=10V

ID=10A

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDD=25V

VGS=10V

RG=6

RL=25

ID=1A

Gate Resistance

0.2

0.8

VDS=0V, VGS=0, f=1MHz

Source-Drain Diode

Forward On Voltage

VDS

1.1

IS=2.3A, VGS=0

Continuous Diode Forward Current

7.5

Pulsed Diode Forward Current

ISM

Notes:

Pulse Test: Pulse width≦300µs, duty cycle

≦ %.

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