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BCR20AM Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part # BCR20AM
Description  MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR20AM Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

  BCR20AM Datasheet HTML 1Page - Mitsubishi Electric Semiconductor BCR20AM Datasheet HTML 2Page - Mitsubishi Electric Semiconductor BCR20AM Datasheet HTML 3Page - Mitsubishi Electric Semiconductor BCR20AM Datasheet HTML 4Page - Mitsubishi Electric Semiconductor BCR20AM Datasheet HTML 5Page - Mitsubishi Electric Semiconductor  
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Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100
101
23 4 5
7
102
23 4 5
7
101
102
2
3
4
5
7
103
2
3
4
5
7
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
GATE TRIGGER PULSE WIDTH (
µs)
0
20
40
60
80
160
100
120
140
101 2
102
35 7
2
103
35 7
2
104
35 7
TYPICAL EXAMPLE
Tj = 125
°C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
µs)
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
100 2
101
35 7
2
102
35 7
2
103
35 7
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
Tj = 125
°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
COMMUTATION CHARACTERISTICS
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
330
Ω
6V
6
Ω
A
V
330
Ω
6V
6
Ω
A
V
330
Ω
6V
6
Ω
A
V
TEST PROCEDURE
TEST PROCEDURE
TEST PROCEDURE



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