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SSG4504 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4504 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 7 page  Elektronische Bauelemente SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, RDS(ON) 30 mΩ Ω Ω Ω P-Ch: -6.5A, -40 V, RDS(ON) 40 mΩ Ω Ω Ω 28-Aug-2017 Rev. B Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4504SS = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4504 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SSG4504 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS Ratings Parameter Symbol N-Ch P-Ch Unit Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V TA=25°C 7.2 -6.5 A Continuous Drain Current 1, V GS@10V TA=100°C ID 5.6 -5.1 A Pulsed Drain Current 3 IDM 14.5 -13 A Total Power Dissipation TC=25°C PD 2.5 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Data Thermal Resistance Junction-ambient 1 RθJA 85 Thermal Resistance Junction-ambient 2 RθJA 135 Thermal Resistance Junction-case 1 RθJC 50 °C / W Package MPQ Leader Size SOP-8 2.5K 13 inch SOP-8 A H B M D C J K F L E N G G2 G1 S1 S2 D2 D2 D1 D1 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.79 6.20 H 0.33 0.51 B 4.70 5.11 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.3 1.752 E 0.40 1.27 M 0 0.25 F 0.10 0.25 N 0.25 REF. G 1.27 TYP. |
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