Elektronische Bauelemente

SSG4504

N & P-Ch Enhancement Mode Power MOSFET

Ω

Ω

Ω

Ω

Ω

Ω

28-Aug-2017 Rev. B

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-40

-

-

V

Gate Threshold Voltage

-1

-

-2.5

V

Forward Transfer conductance

-

12

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

-1

Drain-Source Leakage Current

-

-

-5

uA

-

-

40

Static Drain-Source On-Resistance

4

-

-

65

m

Total Gate Charge

-

9

-

Gate-Source Charge

-

2.54

-

Gate-Drain (“Miller”) Change

-

3.1

-

nC

Turn-on Delay Time

-

19.2

-

Rise Time

-

12.8

-

Turn-off Delay Time

-

48.6

-

Fall Time

-

4.6

-

nS

Input Capacitance

-

1004

-

Output Capacitance

-

108

-

Reverse Transfer Capacitance

-

80

-

pF

f=1.0MHz

Source-Drain Diode

Forward On Voltage

1

-

-

-1

V

Continuous Source Current

3

-

-

-6.5

A

Pulsed Source Current

4

-

-

-13

A

Notes:

1.

Surface mounted on a 1 inch

2.

When mounted on Min. copper pad.

3.

Pulse width limited by maximum junction temperature , pulse width ≦ 300us , duty cycle ≦ 2%

4.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%