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SSG9926J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSG9926J
Description  Dual-N Enhancement Mode Power MOSFET
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG9926J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSG9926J
4.8A, 20V, RDS(ON) 30mΩ
Ω
Ω
Ω
Dual-N Enhancement Mode Power MOSFET
10-Feb-2016 Rev. B
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
A
H
B
M
D
C
J
K
F
L
E
N
G
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG9926J provides the designers with the best
combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
FEATURES
Advanced trench processing technology
High density cell design for ultra low on-resistance
High power and current handing capability
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOP-8
4K
13 inch
ABSOLUTE MAXIMUM RATINGS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
1
ID
4.8
A
Pulsed Drain Current
IDM
30
A
Power Dissipation
1
PD
1.25
W
Thermal Resistance from Junction to Ambient
1
RθJA
100
°C / W
Junction and Storage Temperature Range
TJ, TSTG
150, -55~150
°C
Notes:
1.
The surface of the device is mounted on a 1’’ × 1’’ FR4 board.
G
S
G
S
D
D
D
D
SOP-8
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
H
0.35
0.49
B
4.80
5.00
J
0.375 REF.
C
3.80
4.00
K
45°
D
0°
8°
L
1.35
1.75
E
0.40
0.90
M
0.10
0.25
F
0.19
0.25
N
0.25 REF.
G
1.27 TYP.
Q9926
= Date Code


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