SSG9926J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSG9926J

4.8A, 20V, RDS(ON) 30mΩ

Ω

Dual-N Enhancement Mode Power MOSFET

10-Feb-2016 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Zero Gate Voltage Drain Current

IDSS

µA

VDS=20V, VGS=0

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS=±12V

Gate-Threshold Voltage

VGS(th)

0.6

1.2

VDS=VGS, ID=250µA

VGS=4.5V, ID=6A

Drain-Source On-Resistance

RDS(ON)

VGS=2.5V, ID=5A

Forward Transfer Conductance

gfs

VDS=15V, ID=6A

Switching Characteristics

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDD=15V

VGEN=4.5V

RL=15

RGEN=6

ID=1A

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Charge

Qgd

3.3

VDS=15V

VGS=4.5V

ID=6A

Source-Drain Diode Characteristics

Maximum Diode Forward Current

Diode Forward Voltage

VSD

1.2

IS=1.7A, VGS=0

Source-Drain Reverse Recovery Time

TRR

IF=1.7A, di/dt=100A/µS

Notes:

Pulse Test : Pulse width≦300µs, duty cycle≦2%.

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