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SSP7466N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSP7466N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSP7466N 20A, 60V, RDS(ON) 6mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 04-Jan-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SSP7466N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES Low RDS(ON) trench technology Low thermal resistance Fast switching speed APPLICATIONS White LED boost converter Automotive systems Industrial DC/DC conversion circuits PACKAGE INFORMATION Package MPQ Leader Size SOP-8PP 3K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TA=25°C 20 Continuous Drain Current 1 TA=70°C ID 19 A Pulsed Drain Current 2 IDM 100 A Continuous Source Current(Diode Conduction) 1 IS 5 mJ TA=25°C 3.5 Power Dissipation 1 TA=70°C PD 3.2 W t≦10sec 35 Maximum Thermal Resistance from Junction to Ambient 1 Steady State RθJA 65 °C / W Operating Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C Notes: 1. The surface of the device is mounted on a 1’’ × 1’’ FR4 board. 2. Pulse width is limited by the maximum junction temperature. SOP-8PP G S S S D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.80 1.00 θ 0 ° 10 ° B 5.3 BSC. b 5.2 BCS C 0.15 0.25 c 0.20 0.50 D 3.8 BCS. d 1.27BSC E 6.05 BCS. e 5.65 BCS. F 0.03 0.30 f 0.10 0.40 G 4.35 BCS. g 1.3 BCS. L 0.40 0.70 |
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