SSP7466N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSP7466N

20A, 60V, RDS(ON) 6mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

04-Jan-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±10

µA

VDS=0V, VGS= ±20V

VDS=48V, VGS=0

Zero Gate Voltage Drain Current

IDSS

µA

VDS=48V, VGS=0, TJ=55°C

On-State Drain Current

ID(ON)

VDS=5V, VGS=10V

VGS=10V, ID=16A

Static Drain-Source On-Resistance

RDS(ON)

VDS=4.5V, ID=15A

Forward Transconductance

gfs

VDS=15V, ID=16A

Diode Forward Voltage

VSD

0.66

VGS=0, IS=2.5A

Dynamic Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=30V

VGS=4.5V

ID=16A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

223

Fall Time

VDD=30V

VGEN=10V

RL=1.8

RGEN=6

ID=16A

Input Capacitance

Ciss

4045

Output Capacitance

Coss

592

Reverse Transfer Capacitance

Crss

513

VDS=15V

VGS=0

f=1MHz

Notes:

Pulse test : Pulse width≦300µs, duty cycle≦2%.

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