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SSPS7338N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSPS7338N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() Elektronische Bauelemente SSPS7338 19A, 30V, RDS(O ) 6.9 mΩ Ω Ω Ω -Ch Enhancement Mode Power MOSFET 25-Apr-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. B E F G g A e b θ D C d RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATION Industrial D/C/DC conversion circuits White LED boost converters Automotive systems PACKAGE INFORMATION Package MPQ Leader Size DFN3x3-8PP 3K 13 inch MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA=25°C 19 A Continuous Drain Current 1 TA=70°C ID 16 A Pulsed Drain Current 2 IDM 80 A Continuous Source Current (Diode Conduction) 1 IS 5.1 A TA=25°C 3.5 W Power Dissipation 1 TA=70°C PD 2 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Ratings t≦10 sec 35 °C / W Maximum Thermal Resistance from Junction to Ambient 1 Steady State RθJA 81 °C / W Notes: 1. The surface of the device is mounted on a 1” x 1” FR4 board. 2. The pulse width is limited by the maximum junction temperature. DFN3x3-8PP Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.70 0.90 θ 0 ° 12 ° B 3.00BSC b 0.20 0.40 C 0.10 0.25 d 0.65BSC D 1.80 2.3 e 3.00BSC E 3.2BSC g 0.70(TYP.) F 0.01 0.02 G 2.35BSC |
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