SSPS7338N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSPS7338

19A, 30V, RDS(O ) 6.9 mΩ

Ω

-Ch Enhancement Mode Power MOSFET

25-Apr-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static

Gate-Source Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

VDS=24V, VGS=0

Zero Gate Voltage Drain Current

IDSS

µA

VDS=24V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

VDS=5V, VGS=10V

6.9

VGS=10V, ID=17.6A

Drain-Source On-Resistance

RDS(ON)

9.8

VGS=4.5V, ID=12.4A

Forward Transconductance

gfs

VDS=15V, ID=17.6A

Diode Forward Voltage

VSD

0.72

IS=2.6A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

7.1

Gate-Drain Charge

Qgd

9.2

VDS=15V

VGS=4.5V

ID=17.6A

Input Capacitance

Ciss

1835

Output Capacitance

Coss

315

Reverse Transfer Capacitance

Crss

303

VDS=15V

VGS=0

f=1MHz

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDS=15V

VGEN=10V

ID=17.6A

RL=0.9

RGEN=6

Notes:

Pulse test：PW≦300µs, duty cycle≦2%.

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