SST8810J datasheet(2/3 Pages) SECOS

2 / 3 page

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Elektronische Bauelemente

SST8810J

7A, 20V, RDS(ON) 20 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

26-Oct-2015 Rev. A

Page 2 of 3

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Drain-Source Leakage Current

IDSS

µA

VDS=16V, VGS=0

±1

µA

VDS=0V, VGS=±4.5V

Gate-Body Leakage Current

IGSS

±10

µA

VDS=0V, VGS=±8V

Gate-Threshold Voltage

VGS(th)

0.4

VDS=VGS, ID=250µA

VGS=10V, ID=7A

VGS=4.5V, ID=6.6A

VGS=3.8V, ID=6A

VGS=2.5V, ID=5.5A

Drain-Source On-Resistance

RDS(ON)

VGS=1.8V, ID=5A

Forward Transconductance

gfs

VDS=5V, ID=7A

Diode Forward Voltage

VSD

IS=1A, VGS=0

Dynamic Characteristics

Input Capacitance

Ciss

1150

Output Capacitance

Coss

185

Reverse Transfer Capacitance

Crss

145

VDS=10V

VGS=0

f=1MHz

Total Gate Charge

Gate-Source Charge

Qgs

0.8

Gate-Drain (“Miller”) Charge

Qgd

3.2

VDS=10V

VGS=4.5V

ID=7A

Switching Characteristics

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=10V

VGS=5V

RL=1.35

RGEN=3

Notes:

Pulse test : Pulse width≤300µs, duty cycle≤0.5%.

SST8810J Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SST8810J Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3

Datasheet Download

Link URL