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EC9508C Datasheet(PDF) 3 Page - E-CMOS Corporation

Part # EC9508C
Description  BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
PDF  10 Pages
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC9508C Datasheet(HTML) 3 Page - E-CMOS Corporation

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BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE DETECTOR
EC9509C/ 08C
Page 3 / 10
5D15N-Rev. F002
E-CMOS Corp.（http://www.ecmos.com.tw）
Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
POWER SUPPLY VOLTAGE
VDD - VSS
8
V
CD PIN INPUT VOLTAGE
VCD
VSS -0.3 TO VDD +0.3
V
OUTPUT VOLTAGE
VOUT
VSS -0.3 TO VDD +0.3
V
OUTPUT CURRENT
IOUT
4
m
A
POWER DISSIPATION
PD SOT23 -5
500
m
W
SOT343
250
mW
OPERATING TEMPERATURE
TOPR
-40 TO +85
℃
STORAGE TEMPERATURE
TSTG
-40 TO +125
℃
JUNCTION TEMPERATURE
Tj(max)
150
℃
JUNCTION TO AMBIENT THERMAL RESISTANCE
θja
347
℃/W
JUNCTION TO CASE THERMAL RESISTANCE
θjc
148
℃/W
Electrical Characteristics
CMOS output products
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Test
circuit
Detection voltage
-VDET
--
-VDET(S)
X 0.98
-VDET
-VDET(S)
X 1.02
V
1
Hysteresis width
VHYS
--
-VDET
X0.03
-VDET
X0.05
-VDET
X0.08
V
1
Current consumption
ISS
VDD=4V
--
4.5
6.5
uA
2
Operating voltage
VDD
--
2.0
--
6.0
V
1
Output Current of output transistor
IOUT
N-channel VDS=0.5V
VDD= 2.4V
2.88
4.98
--
mA
3
P-channel VDS=VDD-0.5V
VDD=4.8 V
1.43
2.39
--
mA
5
Delay time
td
CD=4.7nF
VDD=3V
6
13
20
ms
4



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