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LF355 Datasheet(PDF) 17 Page - National Semiconductor (TI) |
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LF355 Datasheet(HTML) 17 Page - National Semiconductor (TI) |
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17 / 23 page  Typical Applications (Continued) Low Drift Peak Detector 00564623 • By adding D1 and R f,VD1=0 during hold mode. Leakage of D2 provided by feedback path through Rf. • Leakage of circuit is essentially I b (LF155, LF156) plus capacitor leakage of Cp. • Diode D3 clamps V OUT (A1) to VIN−VD3 to improve speed and to limit reverse bias of D2. • Maximum input frequency should be << 1⁄2 πR fCD2 where CD2 is the shunt capacitance of D2. Non-Inverting Unity Gain Operation for LF157 00564675 Inverting Unity Gain for LF157 00564625 www.national.com 17 |
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