EC739435 datasheet(1/8 Pages) E-CMOS

Part #	EC739435

Description	-30V,-5.3A P-Channel MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	E-CMOS [E-CMOS Corporation]

Direct Link	http://www.ecmos.com.tw/

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1 / 8 page

EC739435

-30V、

、

、-5.3A P-Channel MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 7

5D10N Rev.F003

Description

The EC739435 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for

power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Features and Benefits:

◆ VDS = -30V,ID = -5.3A

RDS(ON) < 85m

@ VGS=-4.5V

RDS(ON) < 53m

@ VGS=-10V

◆ High Power and current handing capability

◆ Lead free product is acquired

◆ Surface Mount Package

Application

◆ Battery protection

◆ Load switch

◆ Power management

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Thermal Resistance

Thermal Resistance, Junction-to-Ambient (Note 2)

RθJA

50

℃/W

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

ID

-5.3

A

Drain Current-Continuous@ Current-Pulsed (Note 1)

IDM

-20

A

Maximum Power Dissipation

PD

2.5

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

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EC739435 Datasheet(PDF) 1 Page - E-CMOS Corporation

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