PB4350 datasheet(5/12 Pages) PHILIPS

5 / 12 page

2003 May 13

Philips Semiconductors

Product speciﬁcation

50 V low VCEsat NPN transistor

PBSS4350Z

handbook, halfpage

hFE

IC (mA)

600

100

200

300

500

400

MGW175

10−1

110

102

103

104

(1)

(2)

(3)

Fig.2

DC current gain as a function of collector

current; typical values.

VCE =2V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

0.2

IC (mA)

VBE

(V)

1.2

0.4

0.8

0.6

1.0

MGW176

10−1

110

102

103

104

(1)

(2)

(3)

Fig.3

Base-emitter voltage as a function of

collector-current; typical values.

VCE =2V.

(1) Tamb = −55 °C.

(2) Tamb =25C.

(3) Tamb = 150 °C.

handbook, halfpage

IC (mA)

103

102

MGW181

10−1

110

102

103

104

VCEsat

(mV)

(1)

(2)

(3)

Fig.4

Collector-emitter saturation as a function of

collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

IC (mA)

1.2

0.6

0.4

0.2

0.8

1.0

MGW178

10−1

110

102

103

104

VBEsat

(V)

(1)

(2)

(3)

Fig.5

Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

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