PB4350 datasheet(6/12 Pages) PHILIPS

6 / 12 page

2003 May 13

Philips Semiconductors

Product speciﬁcation

50 V low VCEsat NPN transistor

PBSS4350Z

handbook, halfpage

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

(11)

(12)

1200

1000

200

400

600

800

0.4

0.8

1.2

1.6

MGW179

VCE (V)

(mA)

Fig.6

Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = 3.96 mA.

(2) IB = 3.63 mA.

(3) IB = 3.30 mA.

(4) IB = 2.97 mA.

(5) IB = 2.64 mA.

(6) IB = 2.31 mA.

(7) IB = 1.98 mA.

(8) IB = 1.65 mA.

(9) IB = 1.32 mA.

(10) IB = 0.99 mA.

(11) IB = 0.66 mA.

(12) IB = 0.33 mA.

VCE =5V.

handbook, halfpage

(4)

(3)

(2)

(5)

(6)

(7)

(8)

(9)

(10)

0.4

0.8

1.2

1.6

MGW180

VCE (V)

(A)

(1)

Fig.7

Collector current as a function of

collector-emitter voltage; typical values.

VCE =5V.

(1) IB = 150 mA.

(2) IB = 135 mA.

(3) IB = 120 mA.

(4) IB = 105 mA.

(5) IB =90mA.

(6) IB =75mA.

(7) IB =60mA.

(8) IB =45mA.

(9) IB =30mA.

(10) IB =15mA.

handbook, halfpage

IC (mA)

103

102

10−1

10−2

MGW182

10−1

110

102

103

104

RCEsat

(

Ω)

(1)

(2)

(3)

Fig.8

Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

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