EC733313 datasheet(2/4 Pages) E-CMOS

2 / 4 page

EC733313

-30V、

、

、-8A P-Channel MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 4

4K25N-Rev.F001

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250µA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V,VGS=0V

-1

Gate-Body Leakage Current

IGSS

VGS=±25V,VDS=0V

±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250µA

-1.7

-2.2

-3

VGS=-4.5V, ID=-7A

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-9A

Forward Transconductance

gFS

VDS=-5V,ID=-10A

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

1500

Output Capacitance

Coss

300

Reverse Transfer Capacitance

Crss

VDS=-15V,VGS=0V,

F=1.0MHz

182

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDS=-15V,VGS=-10V,

RGEN=3

ID=1A

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=-15V,ID=-10A,

VGS=-10V

4.5

Body Diode Reverse Recovery Time

Trr

Body Diode Reverse Recovery Charge

Qrr

IF=-10A, dI/dt=100A/µs

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-1A

-0.74

-1

Electrical Characteristics (TA=25℃

℃

℃ unless otherwise noted)

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

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